Semiconductors Front-end
manufacturing process

The oxidation process generates a silicon dioxide (SiO ₂) layer by reacting silicon with oxygen (O ₂) or water vapor (H ₂ O) at high temperatures, which is used as a gate dielectric or isolation layer; The annealing process repairs lattice damage, activates doped atoms, or optimizes film properties by heating (such as rapid thermal annealing RTA).

The key equipment for oxidation annealing process is vertical furnace and rapid heat treatment equipment (RTP), each equipped with 4-6 working units (PM), each PM including 1 cooler, 1 pump, and 1 gas box. Nitrogen (N ₂), hydrogen (H ₂), or inert gas (Ar) are commonly used to control the reaction environment during the processing.

The oxidation process generates a silicon dioxide (SiO ₂) layer by reacting silicon with oxygen (O ₂) or water vapor (H ₂ O) at high temperatures, which is used as a gate dielectric or isolation layer; The annealing process repairs lattice damage, activates doped atoms, or optimizes film properties by heating (such as rapid thermal annealing RTA).

The key equipment for oxidation annealing process is vertical furnace and rapid heat treatment equipment (RTP), each equipped with 4-6 working units (PM), each PM including 1 cooler, 1 pump, and 1 gas box. Nitrogen (N ₂), hydrogen (H ₂), or inert gas (Ar) are commonly used to control the reaction environment during the processing.

The oxidation process generates a silicon dioxide (SiO ₂) layer by reacting silicon with oxygen (O ₂) or water vapor (H ₂ O) at high temperatures, which is used as a gate dielectric or isolation layer; The annealing process repairs lattice damage, activates doped atoms, or optimizes film properties by heating (such as rapid thermal annealing RTA).

The key equipment for oxidation annealing process is vertical furnace and rapid heat treatment equipment (RTP), each equipped with 4-6 working units (PM), each PM including 1 cooler, 1 pump, and 1 gas box. Nitrogen (N ₂), hydrogen (H ₂), or inert gas (Ar) are commonly used to control the reaction environment during the processing.

The oxidation process generates a silicon dioxide (SiO ₂) layer by reacting silicon with oxygen (O ₂) or water vapor (H ₂ O) at high temperatures, which is used as a gate dielectric or isolation layer; The annealing process repairs lattice damage, activates doped atoms, or optimizes film properties by heating (such as rapid thermal annealing RTA).

The key equipment for oxidation annealing process is vertical furnace and rapid heat treatment equipment (RTP), each equipped with 4-6 working units (PM), each PM including 1 cooler, 1 pump, and 1 gas box. Nitrogen (N ₂), hydrogen (H ₂), or inert gas (Ar) are commonly used to control the reaction environment during the processing.

The oxidation process generates a silicon dioxide (SiO ₂) layer by reacting silicon with oxygen (O ₂) or water vapor (H ₂ O) at high temperatures, which is used as a gate dielectric or isolation layer; The annealing process repairs lattice damage, activates doped atoms, or optimizes film properties by heating (such as rapid thermal annealing RTA).

The key equipment for oxidation annealing process is vertical furnace and rapid heat treatment equipment (RTP), each equipped with 4-6 working units (PM), each PM including 1 cooler, 1 pump, and 1 gas box. Nitrogen (N ₂), hydrogen (H ₂), or inert gas (Ar) are commonly used to control the reaction environment during the processing.

The oxidation process generates a silicon dioxide (SiO ₂) layer by reacting silicon with oxygen (O ₂) or water vapor (H ₂ O) at high temperatures, which is used as a gate dielectric or isolation layer; The annealing process repairs lattice damage, activates doped atoms, or optimizes film properties by heating (such as rapid thermal annealing RTA).

The key equipment for oxidation annealing process is vertical furnace and rapid heat treatment equipment (RTP), each equipped with 4-6 working units (PM), each PM including 1 cooler, 1 pump, and 1 gas box. Nitrogen (N ₂), hydrogen (H ₂), or inert gas (Ar) are commonly used to control the reaction environment during the processing.

The oxidation process generates a silicon dioxide (SiO ₂) layer by reacting silicon with oxygen (O ₂) or water vapor (H ₂ O) at high temperatures, which is used as a gate dielectric or isolation layer; The annealing process repairs lattice damage, activates doped atoms, or optimizes film properties by heating (such as rapid thermal annealing RTA).

The key equipment for oxidation annealing process is vertical furnace and rapid heat treatment equipment (RTP), each equipped with 4-6 working units (PM), each PM including 1 cooler, 1 pump, and 1 gas box. Nitrogen (N ₂), hydrogen (H ₂), or inert gas (Ar) are commonly used to control the reaction environment during the processing.

The oxidation process generates a silicon dioxide (SiO ₂) layer by reacting silicon with oxygen (O ₂) or water vapor (H ₂ O) at high temperatures, which is used as a gate dielectric or isolation layer; The annealing process repairs lattice damage, activates doped atoms, or optimizes film properties by heating (such as rapid thermal annealing RTA).

The key equipment for oxidation annealing process is vertical furnace and rapid heat treatment equipment (RTP), each equipped with 4-6 working units (PM), each PM including 1 cooler, 1 pump, and 1 gas box. Nitrogen (N ₂), hydrogen (H ₂), or inert gas (Ar) are commonly used to control the reaction environment during the processing.